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Description
5Pcs A1015 PNP Epitaxial Silicon TransistorType Designator: A1015 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 2 W Maximum Collector Base Voltage Vcb : 50 V Maximum Collector Emitter Voltage Vce : 50 V Maximum Emitter Base Voltage Veb : 5 V Maximum Collector Current Ic max : 0. 15 A Max. Operating Junction Temperature (Tj): 125 C Transition Frequency (ft): 80 MHz Forward Current Transfer Ratio (hFE), MIN: 130 Noise Figure, dB: Package: SOT23
Type Designator: A1015
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: SOT23
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