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Description
FDS4435BZ 4435B 4435 P-Channel PowerTrench MOSFETThis P Channel MOSFET is produced using ON Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs Specification: Max rDS(on)= 20milliohms at VGS = 10V, ID= 8. 8A Max rDS(on)= 35milliohms at VGS= 4. 5V, ID= 6. 7A Datasheet: https: bit. ly 2Pup7xF
This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs
Specification:
- Max rDS(on)= 20milliohms at VGS = -10V, ID= -8.8A
- Max rDS(on)= 35milliohms at VGS= -4.5V, ID= -6.7A
Datasheet:
https://bit.ly/2Pup7xF
Shipping Notes
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Exchange/Return Notes
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