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Description
STMICROELECTRONICS TIP120 Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 65 W, 5 A, 1000 hFEThe TIP120 from STMicroelectronics is a through hole complementary power darlington transistor in TO 220 package. This device manufactured in planar technology with "base island" layout and monolithic darlington configuration resulting in exceptional high gain performance coupled with very low saturation voltage. Collector to emitter voltage (Vce) is 60V Collector current (Ic) is 5A Power dissipation (Pd) is 65W Collector to emitter saturation voltage
- Collector to emitter voltage (Vce) is 60V
- Collector current (Ic) is 5A
- Power dissipation (Pd) is 65W
- Collector to emitter saturation voltage of 4V at 5A collector current
- DC current gain (hFE) of 1000
- Operating junction temperature range from 150°C
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Product details
| Power Dissipation Pd | 65W |
| DC Collector Current | 5A |
| Collector Emitter Voltage V(br)ceo | 60V |
| Transition Frequency ft | - |
| Operating Temperature Max | 150°C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 1000hFE |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-220 |
| MSL | - |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | TIP120 |
| Quantity | Each |
| Technical Data Sheet EN | |
| Product Change Notice EN |
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