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Description
INFINEON IRFP260NPBF MOSFET Transistor, N Channel, 50 A, 200 V, 40 mohm, 10 V, 4 VThe IRFP260NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO 247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Drain to source
- Drain to source voltage (Vds) of 200V
- Gate to source voltage of �20V
- On resistance Rds(on) of 40mohm at Vgs 10V
- Power dissipation Pd of 300W at 25�C
- Continuous drain current Id of 50A at Vgs 10V and 25�C
- Operating junction temperature range from -55�C to 175�C
Applications
Power Management, Industrial, Portable Devices, Consumer Electronics
Product details
| Power Dissipation Pd | 300W |
| Operating Temperature Max | 175�C |
| Continuous Drain Current Id | 50A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 4V |
| Product Range | - |
| Automotive Qualification Standard | - |
| Drain Source Voltage Vds | 200V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-247AC |
| On Resistance Rds(on) | 0.04ohm |
| MSL | - |
Other details
| Brand | INFINEON |
| Part Number | IRFP260NPBF |
| Quantity | Each |
| Technical Data Sheet EN | |
| Application Note EN | |
| Product Change Notice EN |
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